Semiconductor Quantum Structures and Devices

Работ: 469

Peculiarities of magnetic field and current penetration in a system of interacting Josephson junctions of finite width
Yu. A. Basin, T. K. Soboleva
СтатьяPhysics of Superconductivity and MagnetismLow Temperature Physics1994Цитирований: 0
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The investigation of charge carriers life time dependence on degree of silicon doping with admixtures creating the deep levels
Sh. Makhkamov, N.A. Tursunov, M. Ashurov
СтатьяSemiconductor Quantum Structures and Devices1995Цитирований: 0
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The influence of super high frequency wave on recombination currents in p-n junction
G. Gulyamov
СтатьяSilicon and Solar Cell Technologies1995Цитирований: 0
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Spectroscopy of layers of InAs in GaAs across the transition from layered to three-dimensional growth
Б. Н. Звонков, E. R. Lin’kova, I. G. Malkina +2
СтатьяSemiconductor Quantum Structures and DevicesJournal of Experimental and Theoretical Physics Letters1996Цитирований: 0
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Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement
A. V. Sakharov, S. V. Ivanov, S. V. Sorokin +4
СтатьяStrong Light-Matter InteractionsTechnical Physics Letters1997Цитирований: 0
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Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement
I. L. Krestnikov, N. N. Ledentsov, М. В. Максимов +6
СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0
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Observation of a negative characteristic temperature for the threshold current of diode lasers for the 2.8 /gmm spectral range
А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev +2
СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters1997Цитирований: 0
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Superluminescence in an AlGaAsSb/InGaAsSb/AlGaAsSb double heterostructure
K. D. Moiseev, M. P. Mikhaĭlova, O. V. Andreichuk +2
СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0
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Phase effects in a semiconductor laser with diffraction extraction of radiation
M. A. Kaliteevskiĭ, E. L. Portnoĭ, G. S. Sokolovskiĭ
СтатьяStrong Light-Matter InteractionsTechnical Physics Letters1997Цитирований: 0
ABI
Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W
Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov +12
СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0
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Infrared laser (λ=3.2 μm) based on broken-gap type II heterojunctions with improved temperature characteristics
K. D. Moiseev, M. P. Mikhaiova, O. G. Ershov +1
СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters1997Цитирований: 0
ABI
1.94-μm light-emitting diodes for moisture-content measurements
А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev
СтатьяSemiconductor Lasers and Optical DevicesTechnical Physics Letters1997Цитирований: 0
ABI
Power characteristics of 2.2 μm LEDs for spectroscopic applications
А. А. Попов, V. V. Sherstnev, Yu. P. Yakovlev
СтатьяSpectroscopy and Laser ApplicationsTechnical Physics Letters1997Цитирований: 0
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New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers
В. А. Соловьев, M. P. Mikhaĭlova, M. V. Stepanov +2
СтатьяSpectroscopy and Laser ApplicationsTechnical Physics Letters1997Цитирований: 0
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Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures by submonolayer migration-stimulated epitaxy
G. É. Cirlin, V. N. Petrov, S. A. Masalov +2
СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0
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Photoluminescence properties of AlxGa1−xAs epitaxial layers grown under conditions of ultrafast flux cooling
А. В. Абрамов, A. G. Deryagin, N. G. Deryagin +5
СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0
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Investigation of spontaneous and coherent radiation in the 3–4 μm wavelength range in an InGaAsSb/AlGaSbAs laser heterostructure
E. A. Grebenshchikova, O. G. Ershov, B. E. Zhurtanov +3
СтатьяSemiconductor Lasers and Optical DevicesTechnical Physics Letters1997Цитирований: 0
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Properties of the electron channel in single GaInAsSb/p-InAs heterostructures
T. I. Voronina, T. S. Lagunov, M. P. Mikhaĭlova +4
СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1997Цитирований: 0
ABI
The profiles of barium distributions in GaAs doped by low energy barium ions
Д. А. Ташмухамедова, F.G. Dzhurabekova, Mirzhalilova +1
СтатьяIon-surface interactions and analysis1997Цитирований: 0
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Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm
V. M. Ustinov, A. R. Kovsh, A. E. Zhukov +9
СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
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Self-organized nanosize InP and InAsP clusters obtained by metalorganic compound hydride epitaxy
D. A. Vinokurov, V. A. Kapitonov, O. V. Kovalenkov +2
СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
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High-temperature diode formed by epitaxial GaP layers
M. M. Sobolev, В. Г. Никитин
СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
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Fabrication of InAs quantum dots on silicon
G. É. Cirlin, V. N. Petrov, В. Г. Дубровский +6
СтатьяSurface and Thin Film PhenomenaTechnical Physics Letters1998Цитирований: 0
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Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region
Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik +11
СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
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GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy
A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh +7
СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
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