Nanowire Synthesis and Applications

Работ: 101

Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects
Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3
СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 2
ABI
Influence of GaAs molecules on the photosensitivity of pSi–n(GaSb)1–x (Si2) x and nGaAs–p(InSb)1–x (Sn2) x heterostructures
Sh. N. Usmonov
СтатьяSemiconductor materials and interfacesApplied Solar Energy2016Цитирований: 2
ABI
Synthesis of semiconductor nanowires by pulsed current electrodeposition of metal with subsequent sulfurization
С. А. Гаврилов, L. Nosova, I. Sieber +3
СтатьяAnodic Oxide Films and Nanostructuresphysica status solidi (a)2005Цитирований: 1
ABI
Enhanced and Passivated Co-doping Effect of Organic Molecule and Bromine on Graphene/HfO<sub>2</sub>/Silicon Metal–Insulator–Semiconductor (MIS) Schottky Junction Solar Cells
Kalyani D. Kadam, Malik Abdul Rehman, Honggyun Kim +10
СтатьяNanowire Synthesis and ApplicationsACS Applied Energy Materials2022Цитирований: 1
ABI
Factors of Efficient Generation of Electricity in a Solar Cell with Nanohetero Junctions
RAMIZULLA MUMINOV, Erkin Z. Imamov, R.KH. RAKHIMOV +1
СтатьяQuantum Dots Synthesis And PropertiesComputational nanotechnology2023Цитирований: 1
ABI
The Effect of Height on the Efficiency of Vertical Silicon Tunnel Junction Solar Cell for High Solar Concentration
A. É. Atamuratov, B.Q. Jumaboyev, A.E. Abdikarimov +2
Статьяsolar cell performance optimization2023Цитирований: 1
ABI
Strain, pressure and temperature effects on linear and nonlinear optical properties of InP/InAs1−xPx/InP quantum well heterostructures
A. B. Davlatov, Asaad H. Hameed, Kawtar Feddi +8
СтатьяSemiconductor Quantum Structures and DevicesApplied Physics A2024Цитирований: 1
ABI
A General Elastomeric Agent to Addressing Embrittlement in High‐Efficiency Organic Solar Cells
Saimeng Li, Yufei Wang, Chunlong Sun +13
СтатьяOrganic Electronics and PhotovoltaicsAdvanced Materials2025Цитирований: 1
ABI
A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor
A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3
СтатьяAdvancements in Semiconductor Devices and Circuit DesignSilicon2025Цитирований: 1
ABI
ANALYSIS OF POROUS NANOSILICON BY RAMAN SPECTROSCOPY
V. M. Rotshteyn, T. K. Turdaliev, Х. Б. Ашуров
СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Applied Spectroscopy2022Цитирований: 1
ABI
Cost-effective high-performance quantum dot photodetectors with dual polythiophene hole transporting layers
Junjiang Wu, Mengyuan Gao, Jingjing Wang +7
СтатьяOrganic Electronics and PhotovoltaicsApplied Physics Letters2024Цитирований: 1
ABI
Energy Levels of Nanodots Inside Semiconductor Nanowires
A. B. Davlatov, G. Gulyamov, Doston Urinboev
СтатьяAdvancements in Semiconductor Devices and Circuit DesignBrazilian Journal of Physics2024Цитирований: 1
ABI
Effect of Hydrostatic Pressure and Temperature on Thermodynamic Properties of Electron Gas in Narrow Bandgap Semiconductor Nanowires
A. B. Davlatov, G. Gulyamov, E. Feddi +3
СтатьяSemiconductor Quantum Structures and DevicesJournal of Low Temperature Physics2024Цитирований: 1
ABI
Analysis of Porous Nanosilicon by Raman Spectroscopy
V. M. Rotshteyn, T. K. Turdaliev, Х. Б. Ашуров
СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Applied Spectroscopy2022Цитирований: 1
ABI
Drift mobility of carriers in porous silicon
N. S. Averkiev, L. P. Kazakova, É. A. Lebedev +1
СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2001Цитирований: 1
ABI
Heteroepitaxy of GaAs on Porous Silicon: The Structure of the Interface
T. Kovyazina, A. A. Kutas, V.I. Khitko +5
СтатьяSilicon Nanostructures and PhotoluminescenceMaterials science forum1993Цитирований: 0
ABI
Spectroscopy of layers of InAs in GaAs across the transition from layered to three-dimensional growth
Б. Н. Звонков, E. R. Lin’kova, I. G. Malkina +2
СтатьяSemiconductor Quantum Structures and DevicesJournal of Experimental and Theoretical Physics Letters1996Цитирований: 0
ABI
Influence of surface wettability on the cathodic electroluminescence of porous silicon
D. N. Goryachev, O. M. Sreseli, L. V. Belyakov
СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1997Цитирований: 0
ABI
Studies on sensitivity of porous silicon surfaces to environmental gases
Ali E. Aliev, Sh. U. Yuldashev, P. K. Khabibullaev +2
СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Materials Engineering and Performance1997Цитирований: 0
ABI
Fabrication of regular three-dimensional lattices of submicron silicon clusters in an SiO2 opal matrix
V. N. Bogomolov, В. Г. Голубев, Н. Ф. Картенко +6
СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1998Цитирований: 0
ABI
Modified method of plasma-enhanced chemical vapor deposition of nanocrystalline silicon
V. G. Golubev, А. В. Медведев, А. Б. Певцов +1
СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1998Цитирований: 0
ABI
Deep diffusion doping of macroporous silicon
E. V. Astrova, V. B. Voronkov, I. V. Grekhov +2
СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1999Цитирований: 0
ABI
Long-range gettering of microdefects in silicon single crystals during the formation of porous silicon layers on their surface and ion irradiation
V. A. Perevoshchikov, V. D. Skupov
СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1999Цитирований: 0
ABI
Effect of anodic etching of heavily doped silicon on the location of the plasma minimum
V. B. Shuman
СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1999Цитирований: 0
ABI
Photoinduced self-organization of gallium nanowires on a GaN surface
D. A. Bedarev, S. O. Kognovitskiĭ, W. V. Lundin
СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 0
ABI