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Работы, цитирующие эту работу

Работ: 15

Работа: Physics of Semiconductor Devices

  1. Mechanism of charge transfer in n-CdS/p-CdTe heterojunctions

    S. A. Muzafarova, Ш. А. Мирсагатов, J. Janabergenov

    СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2007Цитирований: 10
    ABI

  2. Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode

    Ш. А. Мирсагатов, I. B. Sapaev, Zh. T. Nazarov

    СтатьяThermography and Photoacoustic TechniquesInorganic Materials2014Цитирований: 9
    ABI

  3. Temperature effect on the current-voltage characteristics of single-crystalline Si photovoltaic arrays

    Р. А. Муминов, М. Н. Турсунов, О. Ф. Тукфатуллин

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2007Цитирований: 6
    ABI

  4. Role of the silicon dioxide in formation of higher manganese silicide films

    T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +3

    СтатьяAdvanced Thermoelectric Materials and Devices2004Цитирований: 2
    ABI

  5. The effect of γ radiation on the properties of p-n-p structures based on polycrystalline cadmium telluride

    Zh. Zhanabergenov, Ш. А. Мирсагатов, Smagul Karazhanov +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters2003Цитирований: 2
    ABI

  6. Analysis of the induced photothermal conduction in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2013Цитирований: 2
    ABI

  7. The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    СтатьяGlass properties and applicationsSemiconductors2004Цитирований: 1
    ABI

  8. Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2013Цитирований: 1
    ABI

  9. On the generation of radiation defects by accelerated ions in silicon

    А. В. Иванов, N. B. Strokan

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters1998Цитирований: 0
    ABI

  10. Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2008Цитирований: 0
    ABI

  11. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

    I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

    СтатьяSemiconductor materials and devicesSemiconductors2010Цитирований: 0
    ABI

  12. Nanomaterials: Laser‐Based Processing in Gas Phase

    R. A. Ganeev, Rusen Yang, Jung‐Il Hong +4

    ДругоеLaser-Ablation Synthesis of NanoparticlesNanomaterials2012Цитирований: 0
    ABI

  13. Cascade Injection Photodetector for the 500−650-nm Spectral Range on the Basis of Solid Solutions of A2B6 Compounds

    Ш. А. Мирсагатов, B. N. Zaveryukhin, O. K. Ataboev +1

    СтатьяSemiconductor materials and interfacesUkrainian Journal of Physics2013Цитирований: 0
    ABI

  14. Effect of Be Co-Doping on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers

    P. B. Parchinskiy, A. S. Gazizulina, Aslan Nasirov

    СтатьяZnO doping and propertiesRussian Physics Journal2023Цитирований: 0
    ABI

  15. Self‐Assembled Gallium Sulfide (GaS) Heterostructures Enabling Efficient Water Splitting and Selective Ammonia Sensing

    Danil Bukhvalov, Gianluca D’Olimpio, Tsotne Dadiani +11

    Статья2D Materials and ApplicationsAdvanced Functional Materials2025Цитирований: 0
    ABI