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Б. Е. Умирзаков

Работ: 96

Institute of Ion-Plasma and Laser Technologies Named of U. Arifov of the Academy of Sciences of the Republic of Uzbekistan, Azerbaijan

  1. Theoretical and experimental study of plasmon oscillation dispersion in Si and Ge crystals

    З. А. Исаханов, Б. Е. Умирзаков, Gunel Imanova

    СтатьяSurface and Thin Film PhenomenaOptical Materials X2024Цитирований: 2
    ABI

  2. A study of the influence of surface layers’ disordering on the spectrum of energy losses of electrons passed through copper thin single crystal films

    З. А. Исаханов, М. К. Рузибаева, Б. Е. Умирзаков +1

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2011Цитирований: 2
    ABI

  3. Electronic Structure and Properties of Nanoscale Structures Created on the Surface of a Free Si/Cu Film System

    З. А. Исаханов, R. M. Yorkulov, Б. Е. Умирзаков +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 2
    ABI

  4. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2020Цитирований: 2
    ABI

  5. Formation of Nanodimensional SiO2 Films on the Surface of a Free Si/Cu Film System by $${\text{O}}_{2}^{ + }$$ Ion Implantation

    Б. Е. Умирзаков, М. К. Рузибаева, З. А. Исаханов +1

    СтатьяIon-surface interactions and analysisTechnical Physics2019Цитирований: 2
    ABI

  6. Effect of high-dose low-energy reactive-ion implantation on cold cathode properties

    Flyura Djurabekova, Б. Е. Умирзаков, F. F. Umarov +1

    СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2003Цитирований: 1
    ABI

  7. Study of the Processes of the Formation of Nanoscale MoO3 Films by Thermal Oxidation and Ion Bombardment

    Gulmira X. Allayarova, Д. А. Ташмухамедова, R. Djabbarganov +1

    СтатьяTransition Metal Oxide NanomaterialsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 1
    ABI

  8. Fabrication of Cd–Ba–S Nanoscale Structures on the Surface and in the Near-Surface Region of CdS Films by Implantation with Ba+ Ions

    J. Sh. Sodikjanov, Б. Е. Умирзаков

    СтатьяQuantum Dots Synthesis And PropertiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 1
    ABI

  9. Analyzing the Change in the Composition of a CdTe Surface upon Implanting $$O_{2}^{ + }$$ Ions and Subsequent Annealing

    A. A. Abduvayitov, Kh. Kh. Boltaev, Б. Е. Умирзаков +2

    СтатьяAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics2024Цитирований: 1
    ABI

  10. Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

    Б. Е. Умирзаков, I. R. Bekpulatov, Z. A. Tursunmetova

    СтатьяMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2023Цитирований: 1
    ABI

  11. The influence of laser annealing on the surface state of ion doped silicon

    I.N. Kodirov, A. K. Tashatov, Б. Е. Умирзаков +1

    СтатьяLaser Material Processing Techniques1995Цитирований: 0
    ABI

  12. The profiles of barium distributions in GaAs doped by low energy barium ions

    Д. А. Ташмухамедова, F.G. Dzhurabekova, Mirzhalilova +1

    СтатьяIon-surface interactions and analysis1997Цитирований: 0
    ABI

  13. The modification of structure and properties of semiconductors surface by active metals ions implantation

    А.С. Рысбаев, M.T. Normuradov, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysis1999Цитирований: 0
    ABI

  14. Modification of the physical and chemical properties of GaAs/Ge surface epitaxy films by ion implantation

    Д. А. Ташмухамедова, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisSurface and Coatings Technology2002Цитирований: 0
    ABI

  15. The influence of ion implantation on emission characteristics conducting and superconducting materials

    Б. Е. Умирзаков, Д. А. Ташмухамедова

    СтатьяPlasma Diagnostics and Applications2002Цитирований: 0
    ABI

  16. Octahedral Structure of New Formations in the Boundary Layers of a Polystyrene–Kaolin Composite

    U. Kh. Akhmedov, A. A. Tyshchenko, Б. Е. Умирзаков +2

    СтатьяAdsorption, diffusion, and thermodynamic properties of materialsInternational Polymer Science and Technology2005Цитирований: 0
    ABI

  17. Final and Intermediate Product of Fullerene C<sub>60</sub>on the Boundary Layers of Carbon Black Filled Polystyrene

    U. Kh. Akhmedov, G. M. Tukhtaev, Б. Е. Умирзаков

    СтатьяCarbon Nanotubes in CompositesInternational Polymer Science and Technology2006Цитирований: 0
    ABI

  18. Application of ion implantation for obtaining the nanofilms of metal silicides

    Б. Е. Умирзаков, Д. А. Ташмухамедова, B.A. Kadyrov

    СтатьяSemiconductor materials and interfacesUzbekiston Fizika Zhurnali2008Цитирований: 0
    ABI

  19. Estimation of the sizes of disordered surface regions of Cu and Ag thin films using the ion transmission method

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +2

    СтатьяCopper Interconnects and ReliabilityJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2013Цитирований: 0
    ABI

  20. Creation of a mathematical model to identify short circuits in power lines

    A.N. Alyunov, O.S. Vyatkina, Irina Akhmetova +2

    СтатьяElectric Power Systems and ControlE3S Web of Conferences2019Цитирований: 0
    ABI

  21. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

    Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2021Цитирований: 0
    ABI

  22. Experimental and theoretical study of the effect of bombardment with Ar<sup>+</sup> ions on the spectrum of valence electrons of a Si (111) single crystal

    Y. S. Ergashov, Б. Е. Умирзаков, N. A. Nurmatov +1

    СтатьяSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences2021Цитирований: 0
    ABI

  23. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2022Цитирований: 0
    ABI

  24. Effect of Implantation of Ba+ Ions on the Composition, Electronic and Crystal Structure of W(111) and WO2 Surfaces

    Б. Е. Умирзаков, Д. А. Ташмухамедова, F. Ya. Khudaykulov

    СтатьяGas Sensing Nanomaterials and SensorsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 0
    ABI

  25. Infuence of Ba atov adsorption and implanation of Ba-=SUP=-+-=/SUP=- ions on the electronic structure of single crystalline Ge

    Д. А. Ташмухамедова, Б. Е. Умирзаков, Y. S. Ergashov +2

    СтатьяIon-surface interactions and analysisЖурнал технической физики2022Цитирований: 0
    ABI