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Semiconductor Quantum Structures and Devices

Работ: 469

  1. Effect of the band-tail states on the exciton peaks in GaN epilayers grown on sapphire substrates

    Tae Won Kang, Sh. U. Yuldashev, Igor L. Bolotin +5

    СтатьяGaN-based semiconductor devices and materialsJournal of Applied Physics2000Цитирований: 1
    ABI

  2. Alternating-strain-induced drift of nonequilibrium charge carriers in GaAs photodetectors

    B. N. Zaveryukhin, N. N. Zaveryukhina, Р. А. Муминов +1

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters2002Цитирований: 1
    ABI

  3. Bilaterally Sensitive Photodiode Structures in the System Gallium Arsenide–Cadmium Sulfide

    Kutbiddin Ilovitddinovich Vakhobov, A. V. Karimov, Abdumalik Gaibov +2

    СтатьяAdvanced Semiconductor Detectors and MaterialsJournal of Engineering Physics and Thermophysics2003Цитирований: 1
    ABI

  4. Magnetic resistance of silicon specimens with manganese impurities

    Э. У. Арзикулов, Zh. T. Ruzimuradov

    СтатьяSemiconductor Quantum Structures and DevicesJournal of Communications Technology and Electronics2007Цитирований: 1
    ABI

  5. Influence of the thickness of the base region of structures with a Schottky barrier on their current and photoelectric characteristics

    D. M. Edgorova

    СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2007Цитирований: 1
    ABI

  6. Photophysical characteristics of microlayer photodiode pAlGaInAs(Zn)-nGaAs-Au structures

    D. M. Edgorova, F. M. Ashrapov

    СтатьяSemiconductor Quantum Structures and DevicesJournal of Engineering Physics and Thermophysics2007Цитирований: 1
    ABI

  7. The composition dependence of the effective thickness of the base layer in Al x Ga1 − x P/GaP heterophotoconverters

    M. A. Abdukadyrov, I. O. Dzhumaniyazov, Р. А. Муминов

    СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2011Цитирований: 1
    ABI

  8. Advanced theory of multiple exciton generation effect in quantum dots

    Б. Л. Оксенгендлер, N. N. Turaeva, С. Ш. Рашидова

    СтатьяQuantum Dots Synthesis And PropertiesThe European Physical Journal B2012Цитирований: 1
    ABI

  9. Highly sensitive photodetector based on ge double-barrier punch-through structure

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +1

    СтатьяSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment2015Цитирований: 1
    ABI

  10. Role of Fractals in Perovskite Solar Cells

    Б. Л. Оксенгендлер, N. R. Ashurov, С. Е. Максимов +2

    СтатьяSemiconductor Quantum Structures and DevicesEurasian Chemico-Technological Journal2016Цитирований: 1
    ABI

  11. Effect of Temperature and Band Nonparabolicity on Density of States of Two Dimensional Electron Gas

    G. Gulyamov, P. J. Baymatov, B. T. Abdulazizov

    СтатьяSemiconductor Quantum Structures and DevicesJournal of Applied Mathematics and Physics2016Цитирований: 1
    ABI

  12. To the Theory of the Polarized Radiation Absorption in a Semiconductor (001) Quantum Well

    Rustam Yavkachovich Rasulov, I. Éshboltaev

    СтатьяSemiconductor Quantum Structures and DevicesRussian Physics Journal2018Цитирований: 1
    ABI

  13. Fractal Control of the Electron Spectrum of the Interfaces in Solar Elements Based on Covalent Semiconductors

    Х. Б. Ашуров, B. R. Kutlimurotov, Б. Л. Оксенгендлер

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2018Цитирований: 1
    ABI

  14. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    А. С. Саидов, A. Yu. Leĭderman, Sh. N. Usmonov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2020Цитирований: 1
    ABI

  15. Energy Spectrum of Defective Centers in Silicon Doped with Molybdenum

    Shakhrukh Kh. Daliev, Shoira Usmanova, Anifa Paluanova +21

    СтатьяSemiconductor materials and interfacesInternational Journal of Emerging Trends in Engineering Research2020Цитирований: 1
    ABI

  16. The Rectifying Contact of Hydrated Different Size YSZ Nanoparticles for Advanced Electronics

    Alexander Doroshkevich, Anna Zakharova, Б. Л. Оксенгендлер +23

    СтатьяChalcogenide Semiconductor Thin FilmsNanomaterials2022Цитирований: 1
    ABI

  17. Optimal Regime for Growth of Epitaxial Germanium Layers from the Liquid Phase Based on Thermodynamic Calculations

    A. Sh. Razzokov, Khushnudbek Eshchanov

    СтатьяPhotonic and Optical DevicesInternational Journal of Thermodynamics2022Цитирований: 1
    ABI

  18. Features of Liquid–Phase Epitaxy of (InSb)<sub>1–z</sub>(Sn2)<sub>z</sub> Solid Solutions of Molecular Substitution on GaAs and GaP Substrates

    Shukrullo Usmonov, U. P. Asatova, A. M. Akhmedov

    СтатьяSemiconductor Quantum Structures and Devices2022Цитирований: 1
    ABI

  19. Strain, pressure and temperature effects on linear and nonlinear optical properties of InP/InAs1−xPx/InP quantum well heterostructures

    A. B. Davlatov, Asaad H. Hameed, Kawtar Feddi +8

    СтатьяSemiconductor Quantum Structures and DevicesApplied Physics A2024Цитирований: 1
    ABI

  20. Effect of GaSb Compound on Silicon Bandgap Energy

    Х. М. Илиев, Н. Ф. Зикриллаев, K. S. Ayupov +4

    СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2024Цитирований: 1
    ABI

  21. Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature

    P. J. Baymatov, B. T. Abdulazizov, O. M. Yunusov +2

    СтатьяQuantum and electron transport phenomenaJournal of Computational Electronics2024Цитирований: 1
    ABI

  22. Effects of Band Nonparabolicity on the Resonance Peaks of the Single-Particle Entropy of a Two-Dimensional Electron Gas

    B. T. Abdulazizov, P. J. Baymatov, Mahmudjon Tohirjonov +3

    СтатьяQuantum and electron transport phenomenaInternational Journal of Theoretical Physics2024Цитирований: 1
    ABI

  23. Theory of Electron Transport in Two-Barrier Five-Layer Semiconductor Structures

    Rustam Yavkachovich Rasulov, Voxob Rustamovich Rasulov, Makhliyo A. Mamatova +2

    СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2024Цитирований: 1
    ABI

  24. Analyzing the Change in the Composition of a CdTe Surface upon Implanting $$O_{2}^{ + }$$ Ions and Subsequent Annealing

    A. A. Abduvayitov, Kh. Kh. Boltaev, Б. Е. Умирзаков +2

    СтатьяAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics2024Цитирований: 1
    ABI

  25. Temperature Dependence of the Occupancy of Landau Subbands in a Two-Dimensional Electron Gas

    B. T. Abdulazizov, P. J. Baymatov, A. A. Saydaliev +2

    СтатьяQuantum and electron transport phenomenaActa Physica Polonica A2025Цитирований: 1
    ABI