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Работы, цитирующие эту работу

Работ: 20

Работа: Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

  1. Effect of surface microroughness on the composition and electronic properties of CdTe/Mo(111) films

    Y. S. Ergashov, Д. А. Ташмухамедова, Flyura Djurabekova +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics2016Цитирований: 10
    ABI

  2. Formation of thin Crsi <sub>2</sub> films by the solid-phase ion-plasma method and their thermoelectric properties

    I. R. Bekpulatov, Gunel Imanova, Б. Е. Умирзаков +5

    СтатьяAdvanced Thermoelectric Materials and DevicesMaterials Research Innovations2024Цитирований: 9
    ABI

  3. The solid-phase ion-plasma method and thermoelectric properties of thin CrSi2 films

    I. R. Bekpulatov, Gunel Imanova, S. H. Jabarov +8

    СтатьяAdvanced Thermoelectric Materials and DevicesJournal of Materials Science Materials in Electronics2024Цитирований: 6
    ABI

  4. Effect of the Ba+ Ion Implantation on the Composition and Electronic Properties of MoO3/Mo(111) Films

    Б. Е. Умирзаков, Д. А. Ташмухамедова, Soadat Gulyamova +1

    СтатьяTransition Metal Oxide NanomaterialsTechnical Physics2020Цитирований: 6
    ABI

  5. Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

    Д. А. Ташмухамедова, M. B. Yusupjanova, A. K. Tashatov +1

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2018Цитирований: 5
    ABI

  6. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

    СтатьяSemiconductor materials and interfacesSemiconductors2020Цитирований: 4
    ABI

  7. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

    S. B. Donaev

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2020Цитирований: 4
    ABI

  8. Effect of Ion Bombardment on the Density of States of Valence Electrons in CdS Films

    Б. Е. Умирзаков, Д. А. Ташмухамедова, Eshboy Rabbimov +2

    СтатьяChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2019Цитирований: 3
    ABI

  9. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

    S. B. Donaev, V N Karimova, A T Azimov +2

    СтатьяNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science2020Цитирований: 3
    ABI

  10. Obtaining nanoscale CoSiO/Si/CoSi<sub>2</sub> systems for increasing the range of light ray absorption energy

    S. B. Donaev, Б. Е. Умирзаков, D U Sobirova +2

    СтатьяSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science2020Цитирований: 2
    ABI

  11. Electronic Structure and Properties of Nanoscale Structures Created on the Surface of a Free Si/Cu Film System

    З. А. Исаханов, R. M. Yorkulov, Б. Е. Умирзаков +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 2
    ABI

  12. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2020Цитирований: 2
    ABI

  13. Electronic Structure of Single-Crystal CaF&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt;(111) with Nanoscale Phases of Ca and Si

    Yokub Suvonovich Ergahov, B. Umirzakov, Gulmira Khalmuratovna Allayarova

    Статьяnanoparticles nucleation surface interactionsMaterials Sciences and Applications2018Цитирований: 1
    ABI

  14. The effect of implantation barium ions on the surface of Pd and Pd-Ba under ion bombardment

    S. B. Donaev, Jakhongir Normuminov, A.M. Rakhimov +2

    СтатьяIon-surface interactions and analysisIOP Conference Series Earth and Environmental Science2020Цитирований: 1
    ABI

  15. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2021Цитирований: 1
    ABI

  16. Fabrication and Study of the Electronic Structure of МоO3/Мо Nanofilms

    G. Kh. Allayarova

    СтатьяTransition Metal Oxide NanomaterialsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 0
    ABI

  17. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

    Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2021Цитирований: 0
    ABI

  18. Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

    S. B. Donaev, Ganjimurod Shirinov, Б. Е. Умирзаков +2

    СтатьяIon-surface interactions and analysisCoatings2024Цитирований: 0
    ABI

  19. Obtaining Nano-Sized Silicide Films MESi2 for the Contact System

    Jasur Jumayev, Б. Е. Умирзаков, I. R. Bekpulatov +3

    СтатьяSemiconductor materials and interfaces2024Цитирований: 0
    ABI

  20. Study of the temperature dependence of the electrophysical and crystal structure of a thin coating of manganese silicide

    B.D. Igamov, A.I. Kamardin, I.R. Bekpulatov +1

    СтатьяSemiconductor materials and interfacesMaterials Today Communications2026Цитирований: 0
    ABI