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Работы, цитирующие эту работу

Работ: 16

Работа: Current injection in solids

  1. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16
    ABI

  2. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +2

    СтатьяAdvanced Surface Polishing TechniquesPhysics of the Solid State2013Цитирований: 8
    ABI

  3. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

    Ш. А. Мирсагатов, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesPhysics of the Solid State2015Цитирований: 8
    ABI

  4. Current-voltage behavior of silicon containing nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2014Цитирований: 6
    ABI

  5. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2008Цитирований: 6
    ABI

  6. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

    Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

    СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2013Цитирований: 6
    ABI

  7. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

    Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

    СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2009Цитирований: 5
    ABI

  8. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2016Цитирований: 5
    ABI

  9. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

    С. З. Зайнабидинов, А. С. Саидов, M. U. Kalanov +1

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 2
    ABI

  10. Drift mobility of carriers in porous silicon

    N. S. Averkiev, L. P. Kazakova, É. A. Lebedev +1

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2001Цитирований: 1
    ABI

  11. Mechanisms of photocurrent amplification in isotypic n+-GaSb-n0-GaInAsSb-n+-GaAlAsSb heterostructures

    S. V. Slobodchikov, Х. М. Салихов, Yu. P. Yakovlev +1

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
    ABI

  12. The theory of shot noise in the space-charge-limited diffusive conduction regime

    V. L. Gurevich, M. I. Muradov

    СтатьяQuantum and electron transport phenomenaJournal of Experimental and Theoretical Physics2002Цитирований: 0
    ABI

  13. Effect of the grain boundaries on the conductivity and current transport in II–VI films

    T.M. Razykov, Smagul Karazhanov, A. Yu. Leĭderman +2

    СтатьяChalcogenide Semiconductor Thin FilmsSolar Energy Materials and Solar Cells2006Цитирований: 0
    ABI

  14. Influence of phase segregation process on transport properties of dilute magnetic semiconductors

    P. B. Parchinskiy, Fucheng Yu, Cunxu Gao +4

    СтатьяZnO doping and propertiesJournal of Magnetism and Magnetic Materials2006Цитирований: 0
    ABI

  15. Photosensitive n-Ox/p-CuIn3Se5 heterostructures

    I. V. Bodnar, A. A. Vaĭpolin, V. Yu. Rud’ +3

    СтатьяChalcogenide Semiconductor Thin FilmsJournal of Applied Spectroscopy2006Цитирований: 0
    ABI

  16. Influence of Temperature on Current-Voltage characteristics of n-GaAs – p-(GaAs)1-x-y(ZnSe)x(Ge2)y heterostructures

    Akramjon Y. Boboev, Makhmud Kalano, Sirojiddin Zainabidinov

    СтатьяSemiconductor materials and interfaces2016Цитирований: 0
    ABI