Работы, цитирующие эту работу

Работ: 19

Работа: Physics of Semiconductor Devices

Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy
Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2
СтатьяSemiconductor materials and interfacesSemiconductors2009Цитирований: 8
ABI
The study of factors that influence on the effectiveness of the photoconversion of n-CdS/p-CdTe heterostructures
R. R. Kabulov, M. A. Makhmudov, O. K. Ataboev +1
СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2016Цитирований: 7
ABI
The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field
S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1
СтатьяSilicon and Solar Cell TechnologiesSemiconductors2009Цитирований: 5
ABI
Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes
Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2
СтатьяSemiconductor materials and interfacesTechnical Physics2011Цитирований: 4
ABI
Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures
S. A. Muzafarova, Ш. А. Мирсагатов, F. N. Dzhamalov
СтатьяAdvanced Semiconductor Detectors and MaterialsSemiconductors2009Цитирований: 3
ABI
Photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures
T. S. Kamilov, I. V. Ernst, A. Yu. Samunin
СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 2
ABI
Influence of the conductivity type of silicon on the process of radiation degradation of solar cells
Sh. Makhkamov, Р. А. Муминов, M. Kаrimov +4
СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2013Цитирований: 2
ABI
The features of impurity thermal-Photovoltaic and thermal-Voltaic effect of polycrystalline Structures
L. O. Olimov, B. M. Abdurakhmanov
СтатьяSemiconductor materials and interfacesAdvances in Energy and Power2013Цитирований: 2
ABI
Deep diffusion doping of macroporous silicon
E. V. Astrova, V. B. Voronkov, I. V. Grekhov +2
СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1999Цитирований: 0
ABI
The effect of ultrasound on the parameters of metal-dielectric-semiconductor structures
П. Б. Парчинский, С. И. Власов, Р. А. Муминов +2
СтатьяEngineering Technology and MethodologiesTechnical Physics Letters2000Цитирований: 0
ABI
Measurement of efficient thickness of transition layer, stimulated by microwave radiation, in contacts Mo-GaAs
A. B. Kamalov
СтатьяSemiconductor materials and interfacesRadioelectronics and Communications Systems2009Цитирований: 0
ABI
Photocurrent amplification effect of the fet gate p–n junction
D. M. Edgorova
СтатьяPhotoreceptor and optogenetics researchJournal of Engineering Physics and Thermophysics2009Цитирований: 0
ABI
Dependence of the surface generation velocity at silicon-(lead borosilicate) glass interface on conditions of nonequilibrium depletion region formation
P. B. Parchinskiy, Aslan Nasirov, Л. Г. Лигай +2
СтатьяMaterial Science and ThermodynamicsTechnical Physics Letters2011Цитирований: 0
ABI
Effect of neutron irradiation on the structure of silicon p-n junctions of voltage limiters
A. Z. Rakhmatov
СтатьяAdvancements in Semiconductor Devices and Circuit DesignSemiconductors2014Цитирований: 0
ABI
Electrophysical and optical properties of silicon produced by multiple remelting of metallurgical silicon by concentrated solar beams (Review)
А. С. Саидов, A. Yu. Leĭderman
СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2015Цитирований: 0
ABI
Impact of concentrated solar radiation on a GaAs/AlGaAs Heterojunction Photo Converter with a limited absorption layer
M. A. Abdukadyrov, A. S. Ganiev, Р. А. Муминов
Статьяsolar cell performance optimizationApplied Solar Energy2015Цитирований: 0
ABI
Properties of tandem-junction heterophotoconverters with GaAs p–n junctions under exposure by bilaterally concentrated sunlight
M. A. Abdukadyrov, A. S. Ganiev, Р. А. Муминов +1
Статьяsolar cell performance optimizationApplied Solar Energy2016Цитирований: 0
ABI
Change in characteristics of the band structure of oxide materials at high temperatures
I. G. Atabaev, M. S. Paizullakhanov, Sh. R. Nurmatov
СтатьяSemiconductor materials and devicesHigh Temperature2016Цитирований: 0
ABI
A semiempirical efficiency test for solar cells based on AlGaAs–GaAs and Si
Р. Алиев, M. A. Alinazarova, Р. Г. Икрамов
Статьяsolar cell performance optimizationApplied Solar Energy2016Цитирований: 0
ABI