Semiconductor materials and interfaces
Работ: 771
Obtaining Si-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub>-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub> Structures from a Tin Solution-Melt in a Single Technological Cycle
А. С. Саидов, A. Sh. Razzokov, С.И. Петрушенко +1
ABINew Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V
N. F. Zikrillayev, С. Б. Исамов, B. O. Isakov +4
СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Nano- and Electronic Physics2023Цитирований: 2ABIModeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties
S. Sadullaev, I. B. Sapaev, Khidoyat E. Abdikarimov
СтатьяAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics2025Цитирований: 2ABI