Semiconductor materials and interfaces

Работ: 771

The synthesis and photoelectric properties of Si-(Si2)1−x(ZnS)x epitaxial structures
Б. Сапаев, А. С. Саидов
СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2004Цитирований: 3
ABI
On the theory of the two-photon linear photovoltaic effect in n-GaP
Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov
СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2016Цитирований: 3
ABI
Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions
А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1
СтатьяSemiconductor materials and interfacesTechnical Physics Letters2007Цитирований: 3
ABI
Formation of Nanosized Films of Chromium Silicides on Silicon Surface
Makhmudhodzha Isaev, Abdumalik Gaibov, Abdigani Eshkulov +1
ГлаваSemiconductor materials and interfacesLecture notes in networks and systems2021Цитирований: 3
ABI
Electronic and Optical Properties of NiSi2/Si Nanofilms
Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +1
СтатьяSurface and Thin Film PhenomenaTechnical Physics2019Цитирований: 3
ABI
On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures
Shakhrukh Kh. Daliev, Fayzulla A. Saparov
СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 3
ABI
Special features of formation of high-performance semiconductor detectors based on αSi-Si(Li) heterostructures
Р. А. Муминов, Ahmet Saymbetov, Yo. K. Toshmurodov
СтатьяParticle Detector Development and PerformanceInstruments and Experimental Techniques2013Цитирований: 3
ABI
Defect Structure of Silicon Doped with Erbium
Sharifa B. Utamuradova, Kh.S. Daliev, Alisher Khaitbaev +3
СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2024Цитирований: 3
ABI
About the mechanism of formation and growth of the higher manganese silicide films on silicon
T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6
СтатьяSemiconductor materials and interfaces2005Цитирований: 3
ABI
Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP
S. B. Donaev, V N Karimova, A T Azimov +2
СтатьяNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science2020Цитирований: 3
ABI
Energy Band Models of n-Znx Cd1-xS−p-CdTe and n-ZnxCd1−xS−p-Si (0 ≦ × ≦ 1) Heterojunctions
T.M. Razykov, B. Kh. Kadyrov, M. A. Khodyaeva
СтатьяChalcogenide Semiconductor Thin Filmsphysica status solidi (a)1985Цитирований: 3
ABI
Effect of Co+-ion implantation on the composition and properties of free Si–Cu nanofilm structures
З. А. Исаханов, Tulkin Kodirov, A. S. Halmatov +3
СтатьяMetal and Thin Film MechanicsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 3
ABI
On the theory of current–voltage characteristics of semiconductor diode structures with strong carrier accumulation
A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev
СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1979Цитирований: 3
ABI
Electrophysical properties of Silicon doped by Nickel impurity using Diffusion method
Sharifa B. Utamuradova
СтатьяSilicon and Solar Cell TechnologiesInternational Journal of Emerging Trends in Engineering Research2020Цитирований: 3
ABI
On the magnetosensitivity of semiconductor diode structures with strong carrier accumulation
M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman
СтатьяSemiconductor Quantum Structures and Devicesphysica status solidi (a)1981Цитирований: 3
ABI
Salient features of the fabrication of Si(Li) detectors with a large-volume working region
Р. А. Муминов, S. A. Radzhapov, N. A. Sagyndykov +1
СтатьяSemiconductor materials and interfacesAtomic Energy2005Цитирований: 3
ABI
Structure and photoelectric properties of Si1 − x Sn x epilayers
А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +1
СтатьяSemiconductor materials and interfacesTechnical Physics Letters2010Цитирований: 3
ABI
Thermovoltaic processes in gallium arsenide doped with tin
A. Yu. Leĭderman, А. С. Саидов, M. M. Hashaev +1
СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2012Цитирований: 3
ABI
Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions
А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1
СтатьяSemiconductor materials and interfacesTechnical Physics Letters2007Цитирований: 3
ABI
Features of the temperature properties of a field-effect transistor in a current-limiting mode
O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2
СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2013Цитирований: 3
ABI
Quantum yield of current carriers excited by electron beams and electron penetration depth in thin GaP films
S. A. Azimov, D. A. Aronov, V. M. Rubinov +1
СтатьяSemiconductor materials and interfacesphysica status solidi (a)1983Цитирований: 2
ABI
The Enhancement of Exclusion Effect in Compensated Semiconductors under the Action of Impurity Illumination Generating Minority Current Carriers
D. A. Abonov, P. I. Knigin, B. R. Mamatkulov
СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1985Цитирований: 2
ABI
Role of the silicon dioxide in formation of higher manganese silicide films
T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +3
СтатьяAdvanced Thermoelectric Materials and Devices2004Цитирований: 2
ABI
Impurity photovoltaic effect in silicon with multicharge Mn clusters
М. К. Бахадырханов, Х. М. Илиев, С. А. Тачилин +2
СтатьяSemiconductor materials and interfacesApplied Solar Energy2008Цитирований: 2
ABI
Vibrations of photocurrent induced by IR light in silicon with quantum dots
Э. У. Арзикулов, И. П. Парманкулов
СтатьяSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry2008Цитирований: 2
ABI