Semiconductor materials and interfaces

Работ: 771

Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)
Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2
СтатьяSemiconductor materials and interfacesSemiconductors2020Цитирований: 4
ABI
Silicon-lithium telescopic detector in one crystal
Р. А. Муминов, S. A. Radzhapov, А. К. Саймбетов
СтатьяSilicon Nanostructures and PhotoluminescenceAtomic Energy2009Цитирований: 4
ABI
Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure
А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1
СтатьяSemiconductor materials and interfacesSemiconductors2018Цитирований: 4
ABI
RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE
А. С. Саидов, K. A. Amonov, Ada Yul'evna Leyderman
СтатьяSemiconductor materials and interfacesComputational nanotechnology2019Цитирований: 4
ABI
Energy band diagrams, of Cu2SZnXCd1−xS(0 ≦ x ≦ 1) heterojunctions
T.M. Razykov, B. Kh. Kadirov
СтатьяSemiconductor materials and interfacesphysica status solidi (a)1984Цитирований: 4
ABI
Electronic density of states at the interface between silicon and lead borosilicate glass
С. И. Власов, П. Б. Парчинский, B. A. Olmatov
СтатьяSemiconductor materials and interfacesInorganic Materials2000Цитирований: 4
ABI
Reactor irradiation enhanced hetero-diffusion in silicon
A. I. Koifman, O. R. Niyazova
СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1972Цитирований: 3
ABI
Bulk Si1−xGex single- and poly-crystals: a new prospective material for electronics
I. G. Atabaev
СтатьяSemiconductor materials and interfacesComputational Materials Science2001Цитирований: 3
ABI
A compensation method for measuring the junction temperature of a p +-p-n + silicon structure
O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +3
СтатьяSemiconductor materials and interfacesInstruments and Experimental Techniques2013Цитирований: 3
ABI
Composition of uncontrolled impurities and their chemical states and depth profiles at the Al-Si interface
А.А. Абдувайитов, Kh. Kh. Boltaev
СтатьяSemiconductor materials and interfacesTechnical Physics2015Цитирований: 3
ABI
Distinctive Features of the Temperature Sensitivity of a Transistor Structure in a Bipolar Mode of Measurement
A. V. Karimov, D. P. Dzhuraev, Sh. M. Kuliev +1
СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2016Цитирований: 3
ABI
Surface Morphology of NiSi2/Si Films Obtained by the Method of Solid-Phase Deposition
A. K. Tashatov, N. M. Mustafoyeva
СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 3
ABI
Physical foundations of the formation of the silicon-based heterovarizonic structure
M. K. Bakhadirkhanov, С. Б. Исамов
СтатьяSilicon and Solar Cell TechnologiesЖурнал технической физики2022Цитирований: 3
ABI
Study of the Mobility and Electrical Conductivity of Chromium Silicide
M. Sh. Isaev, Tokhirjon U. Atamirzaev, Mukhammadsodik N. Mamatkulov +2
СтатьяSemiconductor materials and interfacesEast European Journal of Physics2023Цитирований: 3
ABI
Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium
Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +4
СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 3
ABI
The High-temperature analysis of silicon properties with manganese-oxygen binary complexes
M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov
СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2024Цитирований: 3
ABI
Modeling influence of temperature and magnetic field on the density of surface states in semiconductor structures
U. I. Erkaboev, N. Yu. Sharibaev, M.G. Dadamirzaev +1
СтатьяElectromagnetic Effects on MaterialsIndian Journal of Physics2024Цитирований: 3
ABI
Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature
Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1
СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 3
ABI
Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M
T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3
СтатьяSemiconductor materials and interfacesEurasian journal of physics and functional materials2018Цитирований: 3
ABI
Wave processes in silicon samples with nickel impurities arising at pulsed hydrostatic pressure
Р. Х. Хамидов, О. О. Маматкаримов
СтатьяElectromagnetic Effects on MaterialsSemiconductor Science and Technology2021Цитирований: 3
ABI
Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi <sub>2</sub>
Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3
СтатьяSemiconductor materials and interfacesMaterials Research Innovations2024Цитирований: 3
ABI
The Result of Successive Exposure to Reverse and Forward Bias on the Electrophysical Characteristics of ZnO:Al/i-ZnO/CdS/CuIn1 – xGax(S, Se)2/Mo Structure Solar Cells
A. Komilov, Б. Э. Эгамбердиев, R. R. Kabulov +2
СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2022Цитирований: 3
ABI
Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties
А. С. Саидов, Sh. N. Usmonov, М. С. Саидов
СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2015Цитирований: 3
ABI
Gallium content-dependent efficiency limits of CIGS solar cells at AM1.5G solar irradiance
Asliddin Komilov
СтатьяChalcogenide Semiconductor Thin FilmsJournal of Photonics for Energy2021Цитирований: 3
ABI
Formation of Cobalt Impurity Microinclusions in Silicon Single Crystals
N. A. Turgunov
СтатьяSilicon and Solar Cell TechnologiesInorganic Materials2018Цитирований: 3
ABI