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Semiconductor materials and devices

Работ: 277

  1. Tuning Surface Charge and Defects in Zinc Oxide Crystals Via Low-Energy Electron Irradiation

    Utkirjon Sharopov, Kamoliddin Samiev, М. К. Курбанов +7

    СтатьяZnO doping and propertiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 2
    ABI

  2. A study of the influence of surface layers’ disordering on the spectrum of energy losses of electrons passed through copper thin single crystal films

    З. А. Исаханов, М. К. Рузибаева, Б. Е. Умирзаков +1

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2011Цитирований: 2
    ABI

  3. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

    Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 2
    ABI

  4. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

    I. G. Atabaev, Kh. N. Juraev

    СтатьяSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering2018Цитирований: 2
    ABI

  5. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

    A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

    СтатьяSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics2022Цитирований: 2
    ABI

  6. Subthreshold irradiation effects in silicon epitaxial films

    M. A. Zaikovskaya, Arnold Kiv, O. R. Niyazova

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1970Цитирований: 2
    ABI

  7. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

    A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics2017Цитирований: 2
    ABI

  8. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 2
    ABI

  9. Study of ion scattering and dechanneling from surface defect structure by computer simulation

    A.A. Dzhurakhalov, B.S. Kalandarov, Munis Kurbonov +2

    СтатьяIon-surface interactions and analysisComputational Materials Science2002Цитирований: 2
    ABI

  10. Tight‐binding molecular dynamics simulation of SiH bond dissociation in silicon clusters

    Z. M. Khakimov, F. T. Umarova, N. T. Sulaymonov +2

    СтатьяSilicon Nanostructures and PhotoluminescenceInternational Journal of Quantum Chemistry2003Цитирований: 2
    ABI

  11. Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    СтатьяSemiconductor materials and devicesDoklady Physics2010Цитирований: 2
    ABI

  12. Investigation of the silicon ion density during molecular beam epitaxy growth

    G. Eifler, E. Kasper, Х. Б. Ашуров +1

    СтатьяSemiconductor materials and devicesJournal of Vacuum Science & Technology A Vacuum Surfaces and Films2002Цитирований: 1
    ABI

  13. Calculation of resonance frequencies of electrons present in the contact area of two semiconductors

    Sh. K. Kaniyazov, K. A. Ismaylov, Abat Muratov

    СтатьяSemiconductor materials and interfacesRadioelectronics and Communications Systems2011Цитирований: 1
    ABI

  14. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

    A.E. Abdikarimov

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2020Цитирований: 1
    ABI

  15. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    СтатьяSemiconductor materials and devices2024Цитирований: 1
    ABI

  16. Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature

    P. J. Baymatov, B. T. Abdulazizov, O. M. Yunusov +2

    СтатьяQuantum and electron transport phenomenaJournal of Computational Electronics2024Цитирований: 1
    ABI

  17. ZrO2 magnetron growth method and investigation of thin film growth

    Б.Д. Игамов, A.I. Kamardin, Y. S. Ergashov +1

    СтатьяSemiconductor materials and devicesAIP conference proceedings2024Цитирований: 1
    ABI

  18. Progress in aluminum-ion battery technology: innovations in cathode materials, electrolyte chemistry, and performance enhancement

    I. Ashurov, M. M. Adilov, Sh. Ch. Iskandarov +2

    СтатьяSemiconductor materials and devices«Узбекский физический журнал»2024Цитирований: 1
    ABI

  19. Oxygen-enriched silicon carbide nanocrystals for efficient overall water splitting: Unveiling effect of doping and electrolyte pH

    Sara Adnan Mahmood, Belal Salah, Khouloud Jlassi +6

    СтатьяCopper-based nanomaterials and applicationsCatalysis Today2025Цитирований: 1
    ABI

  20. Selective synthesis of β-TaON: The critical influence of oxygen partial pressure in ammonolysis

    Mirabbos Hojamberdiev, Ronald Vargas, Lorean Madriz +7

    СтатьяInorganic Chemistry and MaterialsDalton Transactions2025Цитирований: 1
    ABI

  21. A DFT study of Alkaline-earth-metal-doped Hf1 − xAxO2(A = Be, Mg, Ca) for photovolataic applications

    Abrar Nazir, Ali B.M. Ali, Ejaz Ahmad Khera +7

    СтатьяElectronic and Structural Properties of OxidesJournal of Electroceramics2025Цитирований: 1
    ABI

  22. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignSilicon2025Цитирований: 1
    ABI

  23. Temperature Dependence of the Occupancy of Landau Subbands in a Two-Dimensional Electron Gas

    B. T. Abdulazizov, P. J. Baymatov, A. A. Saydaliev +2

    СтатьяQuantum and electron transport phenomenaActa Physica Polonica A2025Цитирований: 1
    ABI

  24. Study of radiation-induced effects in GaAs(O):Cr under 2 Mev electron irradiation using Raman, FTIR and Hall effect measurements

    M. Yu. Tashmetov, Khabibulla Djangabaev

    СтатьяSemiconductor Quantum Structures and DevicesPhysica Scripta2025Цитирований: 1
    ABI

  25. The microstructure and mechanical properties of (TiAlSiY)N nanostructured coatings

    Kateryna Smyrnova, О. В. Бондар, Svitlana Borba-Pogrebnjak +4

    СтатьяMetal and Thin Film Mechanics2017Цитирований: 1
    ABI