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Thin-Film Transistor Technologies

Работ: 188

  1. Low Temperature Phase Transition (Pt) and Defect Formation (Df) in Silicon with Dioxide Inclusions Under X-Ray Irradiation

    Sh. Makhkamov, S. N. Abdurakhmanova

    СтатьяSilicon and Solar Cell TechnologiesMRS Proceedings1995Цитирований: 0
    ABI

  2. Tensor electric properties of n-Si monocrystals

    И. Н. Каримов, A.R. Turaev, A.A. Khlbekov +1

    СтатьяSemiconductor materials and interfaces1995Цитирований: 0
    ABI

  3. Low temperature phase transition(PT) and defect formation(DF) in silicon with dioxide inclusions under X-ray irradiation.

    Sh. Makhkamov, S. N. Abdurakhmanova

    СтатьяSilicon and Solar Cell Technologies1996Цитирований: 0
    ABI

  4. Correlation Between Surface Morphology and Lattice Orientation of Microcrystalline Silicon

    Michio Kondo, T. Nishimiya, K. Saitoh +2

    СтатьяThin-Film Transistor TechnologiesMRS Proceedings1997Цитирований: 0
    ABI

  5. High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC

    R.A. Yankov, M. Voelskow, W. Kreissig +6

    СтатьяSilicon Carbide Semiconductor TechnologiesTechnical Physics Letters1997Цитирований: 0
    ABI

  6. Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight

    K. M. Doshchanov

    СтатьяThin-Film Transistor TechnologiesSemiconductors1997Цитирований: 0
    ABI

  7. Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

    R. Job, W. R. Fahrner, A. Ulyashin +3

    СтатьяSilicon and Solar Cell TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena1997Цитирований: 0
    ABI

  8. Measurement of the amount of free and bound hydrogen in amorphous carbon

    O. I. Kon’kov, И. Н. Капитонов, И. Н. Трапезникова +1

    СтатьяDiamond and Carbon-based Materials ResearchTechnical Physics Letters1997Цитирований: 0
    ABI

  9. Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures

    Н. А. Соболев, A. M. Emel’yanov, Yu. A. Nikolaev +6

    СтатьяSilicon Nanostructures and PhotoluminescenceMaterials science forum1997Цитирований: 0
    ABI

  10. Polycrystalline silicon films doped with aluminum during deposition

    D. V. Shengurov

    СтатьяThin-Film Transistor TechnologiesTechnical Physics Letters1997Цитирований: 0
    ABI

  11. Investigation of implanted layers in silicon carbide by a modulation photoreflection method

    H. Walther, H. Karge, К. Л. Муратиков +2

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters1997Цитирований: 0
    ABI

  12. Light-Induced Degradation Effects in a-Si:H Observed by Raman Scattering Measurements

    Paul Stradins, Michio Kondo, Nobuhiro Hata +1

    СтатьяThin-Film Transistor TechnologiesMRS Proceedings1998Цитирований: 0
    ABI

  13. Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm

    V. B. Voronkov, V. G. Golubev, Н. И. Горшков +4

    СтатьяThin-Film Transistor TechnologiesTechnical Physics Letters1998Цитирований: 0
    ABI

  14. Modified method of plasma-enhanced chemical vapor deposition of nanocrystalline silicon

    V. G. Golubev, А. В. Медведев, А. Б. Певцов +1

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1998Цитирований: 0
    ABI

  15. Charge-transfer theory in polycrystalline semiconductors with deep impurity centers

    K. M. Doshchanov

    СтатьяThin-Film Transistor TechnologiesSemiconductors1998Цитирований: 0
    ABI

  16. Optically Transparent 6H-Silicon Carbide

    A. Bakin, Sergey I. Dorozhkin, A. S. Zubrilov +2

    СтатьяThin-Film Transistor TechnologiesMaterials science forum1998Цитирований: 0
    ABI

  17. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

    Zokirkhon M. Khakimov

    СтатьяThin-Film Transistor TechnologiesMRS Proceedings1998Цитирований: 0
    ABI

  18. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

    Zokirkhon M. Khakimov

    СтатьяSilicon and Solar Cell TechnologiesMRS Proceedings1998Цитирований: 0
    ABI

  19. Unstrained epitaxial InxGa1−xAs films obtained on porous GaAs

    F. Yu. Soldatenkov, V. P. Ulin, A. A. Yakovenko +3

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1999Цитирований: 0
    ABI

  20. Long-range gettering of microdefects in silicon single crystals during the formation of porous silicon layers on their surface and ion irradiation

    V. A. Perevoshchikov, V. D. Skupov

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1999Цитирований: 0
    ABI

  21. Defect Engineering in Si: Ho Light-Emitting Structure Technology

    Н. А. Соболев, A. M. Emel’yanov, R. N. Kyutt +1

    СтатьяSilicon and Solar Cell TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena1999Цитирований: 0
    ABI

  22. Photodetectors based on osmium-doped silicon

    Marat S. Yunusov, Р. А. Муминов, G. Nurkuziev +2

    СтатьяPhotonic and Optical DevicesSemiconductors1999Цитирований: 0
    ABI

  23. Regular relief on a silicon surface as a structural defect getter

    L. S. Berman, I. V. Grekhov, L. S. Kostina +3

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters1999Цитирований: 0
    ABI

  24. Structural and Electrical Quality of Silicon Bicrystals Fabricated by a Modified Direct Bonding Technique

    T. S. Argunova, M. Yu. Gutkin, L. S. Kostina +3

    СтатьяThin-Film Transistor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena1999Цитирований: 0
    ABI

  25. Effect of anodic etching of heavily doped silicon on the location of the plasma minimum

    V. B. Shuman

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1999Цитирований: 0
    ABI