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Thin-Film Transistor Technologies

Работ: 188

  1. The electric properties of poly-crystalline silicon

    Smagul Karazhanov, Sh. Akbarov, E. Dzhaksimov +1

    СтатьяAdvanced MEMS and NEMS Technologies1999Цитирований: 0
    ABI

  2. Thermo-sensitive structures formed in silicon by ion implantation

    А.С. Рысбаев, M.T. Normuradov, I.P. Parmankulov +1

    СтатьяSilicon and Solar Cell Technologies1999Цитирований: 0
    ABI

  3. A Study of the Time Scales of Processes Responsible for the Light-induced Degradation of a-Si:H by Pulse Illumination

    Paul Stradins, Michio Kondo, Akihisa Matsuda

    СтатьяThin-Film Transistor TechnologiesMRS Proceedings2000Цитирований: 0
    ABI

  4. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

    Evgenia V. Kalinina, A. S. Zubrilov, В. А. Соловьев +6

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0
    ABI

  5. Hydroxyl groups and a-C:H and a-C:H(Me) structures

    V. I. Ivanov-Omskiĭ

    СтатьяDiamond and Carbon-based Materials ResearchTechnical Physics Letters2000Цитирований: 0
    ABI

  6. Decrease of threshold energy in photo-stimulated processes in condensed media

    N. N. Turaeva, Б. Л. Оксенгендлер, С. Ш. Рашидова

    СтатьяThin-Film Transistor TechnologiesSynthetic Metals2000Цитирований: 0
    ABI

  7. Charge carrier recombination via isoelectronic traps involving excitons in compensated semiconductors

    Smagul Karazhanov

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2000Цитирований: 0
    ABI

  8. On the Role of Charged Defect States and Deep Traps in the Photocarrier Drift and Diffusion in a-Si:H

    Paul Stradins, Akihisa Matsuda

    СтатьяThin-Film Transistor TechnologiesMRS Proceedings2000Цитирований: 0
    ABI

  9. Formation of radiation defects in silicon structures under low-intensity electron irradiation

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    СтатьяSemiconductor materials and interfacesSemiconductor Science and Technology2001Цитирований: 0
    ABI

  10. Nonlinear and dynamic properties of charge transport in polycrystalline silicon under optical illumination

    K. M. Doshchanov

    СтатьяThin-Film Transistor TechnologiesSemiconductors2001Цитирований: 0
    ABI

  11. Effect of doping with nitrogen on electrical properties and erbium electroluminescence of a-Si:H(Er) films

    O. I. Kon’kov, E. I. Terukov, L. S. Granitsyna

    СтатьяThin-Film Transistor TechnologiesSemiconductors2001Цитирований: 0
    ABI

  12. The effect of external factors on photoelectric parameters of amorphous hydrogenated silicon in relation to the initial characteristics of the films

    Н. Р. Рахимов, U. S. Babakhodzhaev, Kh. Yu. Mavlyanov +1

    СтатьяSurface Roughness and Optical MeasurementsSemiconductors2001Цитирований: 0
    ABI

  13. Defect formation and crystallization in a-Si:H induced by Si+ implantation

    O. A. Golikova, E. V. Bogdanova, Alexey N. Kuznetsov∥ +4

    СтатьяThin-Film Transistor TechnologiesJournal of Non-Crystalline Solids2002Цитирований: 0
    ABI

  14. Minority carrier lifetimes in polycrystalline silicon treated with liquid metals

    Б. Сапаев

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2003Цитирований: 0
    ABI

  15. Uniform acceptor distribution in neutron-transmutation-doped far-infrared p-Ge lasers

    E. W. Nelson, M. V. Dolguikh, Elena Flitsiyan +5

    СтатьяLaser Material Processing TechniquesProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE2003Цитирований: 0
    ABI

  16. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

    Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 0
    ABI

  17. X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

    T. S. Argunova, M. Yu. Gutkin, Jung Ho Je +5

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 0
    ABI

  18. The effect of γ radiation on the temperature dependence of the surface generation velocity at a Si-SiO2 interface

    П. Б. Парчинский, L. G. Ligai, Kh. Zh. Mansurov +1

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2005Цитирований: 0
    ABI

  19. IR spectra of fused silica irradiated by fast neutrons

    I. Kh. Abdukadyrova

    СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Applied Spectroscopy2006Цитирований: 0
    ABI

  20. Electronic theory of irradiation-induced disoerdering and annealing in semiconductors

    A. T. Mamadalimov, Б. Л. Оксенгендлер, N. N. Turaeva

    СтатьяSemiconductor Quantum Structures and DevicesRussian Physics Journal2006Цитирований: 0
    ABI

  21. Effect of gamma irradiation on the electrical and optical properties and conduction mechanism of α-SiO2

    I. Kh. Abdukadyrova

    СтатьяGlass properties and applicationsInorganic Materials2006Цитирований: 0
    ABI

  22. Temperature effect on the current-voltage characteristics of single-crystalline Si photovoltaic arrays

    Р. А. Муминов, М. Н. Турсунов, О. Ф. Тукфатуллин

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2007Цитирований: 0
    ABI

  23. Investigation of 4H-SiC Layers Implanted by Al Ions

    E. Kolesnikova, Evgenia V. Kalinina, A. А. Ситникова +2

    СтатьяSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena2007Цитирований: 0
    ABI

  24. Advanced Heterostructure Si-InSb on Insulator Formed by Bonding of Hydrogen Transferred Si Layer and Implanted SiO2 Film

    V. P. Popov, I. E. Tyschenko, Elexander Cherkov +3

    СтатьяSilicon Nanostructures and PhotoluminescenceECS Transactions2007Цитирований: 0
    ABI

  25. Antireflecting coatings for cascade solar cells

    В. Г. Дыскин, Z. S. Settarova, М. Н. Турсунов

    СтатьяThin-Film Transistor TechnologiesApplied Solar Energy2009Цитирований: 0
    ABI