Работы, цитирующие эту работу

Работ: 58

Работа: Physics of Semiconductor Devices

The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures
T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3
СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 21
ABI
Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films
Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов
СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16
ABI
Injection photodiode based on p-CdTe film
Ш. А. Мирсагатов, A.K. Uteniyazov
СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters2012Цитирований: 11
ABI
Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n +-CdS injection photodiode
Ш. А. Мирсагатов, I. B. Sapaev, Zh. T. Nazarov
СтатьяThermography and Photoacoustic TechniquesInorganic Materials2014Цитирований: 9
ABI
Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure
Ш. А. Мирсагатов, I. B. Sapaev
СтатьяSemiconductor materials and interfacesPhysics of the Solid State2015Цитирований: 8
ABI
Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy
Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2
СтатьяSemiconductor materials and interfacesSemiconductors2009Цитирований: 8
ABI
Features of load current–voltage characteristics of a monocrystalline silicon solar cell at various levels of solar illumination
R. R. Kabulov, N. A. Matchanov, B. R. Umarov
СтатьяPhotovoltaic Systems and SustainabilityApplied Solar Energy2017Цитирований: 7
ABI
Solar thermocell with low-bandgap photoheated layers
М. С. Саидов
СтатьяThermal Radiation and Cooling TechnologiesApplied Solar Energy2012Цитирований: 7
ABI
Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure
Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev
СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2013Цитирований: 6
ABI
Photoelectric and electrical properties of a reverse-biased p-Si/n-CdS/n +-CdS heterostructure
Ш. А. Мирсагатов, I. B. Sapaev
СтатьяSemiconductor materials and interfacesInorganic Materials2014Цитирований: 5
ABI
TO THE THEORY OF ELECTROMOTIVE FORCE GENERATED IN POTENTIAL BARRIER AT ULTRAHIGH FREQUENCY FIELD
M. Ahmetoğlu, Gönül Kaynak, S. H. Shamirzaev +5
СтатьяSemiconductor Quantum Structures and DevicesInternational Journal of Modern Physics B2009Цитирований: 5
ABI
The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field
S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1
СтатьяSilicon and Solar Cell TechnologiesSemiconductors2009Цитирований: 5
ABI
Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes
Д. М. Шукурова, Andrey Orekhov, B. Z. Sharipov +2
СтатьяSemiconductor materials and interfacesTechnical Physics2011Цитирований: 4
ABI
Influence of Temperature on the Output Parameters of a Photovoltaic Module Based on Amorphous Hydrogenated Silicon
O. K. Ataboev, R. R. Kabulov, N. A. Matchanov +1
СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2019Цитирований: 4
ABI
Injection photodiode based on a p-Si-n-CdS-n +-CdS structure
Ш. А. Мирсагатов, I. B. Sapayev
СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2014Цитирований: 4
ABI
Semiconductor voltaics: Problems and prospects
М. С. Саидов
СтатьяAdvanced Semiconductor Detectors and MaterialsApplied Solar Energy2012Цитирований: 4
ABI
Possible influence of nonequilibrium carrier recombination rate saturation on photocell operation
A. Yu. Leĭderman
СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2008Цитирований: 4
ABI
A compensation method for measuring the junction temperature of a p +-p-n + silicon structure
O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +3
СтатьяSemiconductor materials and interfacesInstruments and Experimental Techniques2013Цитирований: 3
ABI
Features of the performance of a transient voltage suppressor in the pulsed mode
A. Z. Rahmatov, O. A. Abdulkhaev, A. V. Karimov +1
СтатьяPulsed Power Technology ApplicationsSemiconductors2013Цитирований: 3
ABI
Features of the temperature properties of a field-effect transistor in a current-limiting mode
O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2
СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2013Цитирований: 3
ABI
Fabrication and investigation of ultravialet Au-Zn x Cd1–x S-Mo-structures
R. R. Kobulov, S. Yu. Gerasimenko, M. A. Maxmudov
СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2017Цитирований: 2
ABI
Photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures
T. S. Kamilov, I. V. Ernst, A. Yu. Samunin
СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 2
ABI
Influence of the conductivity type of silicon on the process of radiation degradation of solar cells
Sh. Makhkamov, Р. А. Муминов, M. Kаrimov +4
СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2013Цитирований: 2
ABI
Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au
С. З. Зайнабидинов, I. G. Tursunov, О. Химматкулов
СтатьяSemiconductor materials and interfacesSemiconductors2018Цитирований: 2
ABI
Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions
А. С. Саидов, Sh. N. Usmonov, D. V. Saparov +1
СтатьяSilicon Nanostructures and PhotoluminescenceApplied Solar Energy2020Цитирований: 2
ABI