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Silicon Nanostructures and Photoluminescence

Работ: 380

  1. Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Elmira M. Naurzalieva +1

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 8
    ABI

  2. Composition and Structure of a Nanofilm Multilayer System of the SiO2/Si/CoSi2/Si(111) Type Obtained via Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2018Цитирований: 8
    ABI

  3. Influence of ion bombardment on the profile of the depth distribution of impurity atoms in Si used for solar cells and diode structures

    Б. Е. Умирзаков, S. J. Nimatov, Kh. Kh. Boltaev

    СтатьяSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2014Цитирований: 8
    ABI

  4. Structure Determination and Defect Analysis n-Si<Lu>, p-Si<Lu> Raman Spectrometer Methods

    Khodjakbar S. Daliev, Sharifa B. Utamuradova, Zavkiddin E. Bahronkulov +2

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 8
    ABI

  5. Stimulation of Photoactive Absorption of Sunlight in Thin Layers of Silicon Structures by Metal Nanoparticles

    Р. Алиев, Jasurbek Gulomov, M. Abduvohidov +3

    СтатьяSilicon Nanostructures and PhotoluminescenceApplied Solar Energy2020Цитирований: 8
    ABI

  6. Thermally Induced Deep Centers in Silicon Doped with Europium or Lanthanum

    Kh.S. Daliev, Sharifa B. Utamuradova, I. Kh. Khamidzhonov +3

    СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2001Цитирований: 8
    ABI

  7. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

    А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

    СтатьяPhase-change materials and chalcogenidesApplied Solar Energy2019Цитирований: 8
    ABI

  8. Adsorption of alkali metals and their effect on electronic properties of grain boundaries in bulk of polycrystalline silicon

    L. O. Olimov

    СтатьяThin-Film Transistor TechnologiesSemiconductors2010Цитирований: 8
    ABI

  9. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    СтатьяSemiconductor materials and interfacesSemiconductors2009Цитирований: 8
    ABI

  10. Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon

    M. K. Bakhadirkhanov, Sh. I. Askarov, Н. Норкулов

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1994Цитирований: 7
    ABI

  11. Infrared quenching of photoconduction in silicon with multicharge manganese clusters

    M. K. Bachadyrchanov, С. Б. Исамов, Н. Ф. Зикриллаев +1

    СтатьяSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry2013Цитирований: 6
    ABI

  12. Current-voltage behavior of silicon containing nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2014Цитирований: 6
    ABI

  13. Emission and optical properties of SiO2/Si thin films

    Д. А. Ташмухамедова, M. B. Yusupjanova

    СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2016Цитирований: 6
    ABI

  14. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 6
    ABI

  15. Formation of Mn4Si7/Si(111), CrSi2/Si(111), and CoSi2/Si(111) Thin Film and Evaluation of Their Optically Direct and Indirect Band Gap

    K.T. Dovranov, Muradulla Normuradov, Kh.T. Davranov +1

    СтатьяSemiconductor materials and interfacesUkrainian Journal of Physics2024Цитирований: 6
    ABI

  16. Heat-voltaic properties of silicon film-type p-n structures generated by vacuum deposition

    Х. Б. Ашуров, B. M. Abdurakhmanov, Ш.К. Кучканов +2

    СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2012Цитирований: 6
    ABI

  17. Effect of annealing on the crystal structure of the surface of silicon doped with Ni, Fe, and Co ions

    Б. Э. Эгамбердиев, N. T. Rustamov, A. S. Mallaev +1

    СтатьяSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2015Цитирований: 6
    ABI

  18. Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

    А. С. Саидов, K. A. Amonov, B. R. Kutlimurotov

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2016Цитирований: 6
    ABI

  19. Effect of the Thickness on Photoelectric Parameters of a Textured Silicon Solar Cell

    Jasurbek Gulomov, Р. Алиев, B. D. Urmanov

    СтатьяSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 6
    ABI

  20. IR photodetectors in the range of λ = 1.5–8 μm, based on silicon with multicharged nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    СтатьяAdvanced Semiconductor Detectors and MaterialsRussian Microelectronics2012Цитирований: 6
    ABI

  21. Photoelectric and electrical properties of a reverse-biased p-Si/n-CdS/n +-CdS heterostructure

    Ш. А. Мирсагатов, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesInorganic Materials2014Цитирований: 5
    ABI

  22. Nickel-Dopant Atom Clusters and their Effect on the Recombination Properties of Silicon

    S.Z. Zaynabidinov, A. O. Kurbanov

    СтатьяSilicon and Solar Cell TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences2019Цитирований: 5
    ABI

  23. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2023Цитирований: 5
    ABI

  24. Optical Properties of GexSi1 – x Binary Compounds in Silicon

    Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

    СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2023Цитирований: 5
    ABI

  25. IR photodetectors operating under background illumination

    М. К. Бахадырханов, С. Б. Исамов

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics2016Цитирований: 5
    ABI