Работы, цитирующие эту работу

Работ: 27

Работа: Current Injection in Solids

Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films
Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов
СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16
ABI
Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)
А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +2
СтатьяAdvanced Surface Polishing TechniquesPhysics of the Solid State2013Цитирований: 8
ABI
Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure
Ш. А. Мирсагатов, I. B. Sapaev
СтатьяSemiconductor materials and interfacesPhysics of the Solid State2015Цитирований: 8
ABI
Exclusion Effect in Semiconductors with Non-Injecting Contacts
D. A. Aronov, P. I. Knigin, Yu. S. Korolev +1
СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1984Цитирований: 7
ABI
Current-voltage behavior of silicon containing nanoclusters of manganese atoms
М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев
СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2014Цитирований: 6
ABI
Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution
Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1
СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2008Цитирований: 6
ABI
Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure
Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev
СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2013Цитирований: 6
ABI
Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution
Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1
СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2009Цитирований: 5
ABI
Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films
S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4
СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2016Цитирований: 5
ABI
Solar Cells Based on Cu(In, Ga)Se2 Thin-Film Layers
R. R. Kobulov, N. A. Matchanov, O. K. Ataboev +1
СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2019Цитирований: 4
ABI
The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels
D. A. Aronov, R. R. Kabulov, Yu. M. Yuabov
СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1988Цитирований: 4
ABI
On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap
A. Yu. Leĭderman
СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1979Цитирований: 3
ABI
Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)
С. З. Зайнабидинов, А. С. Саидов, M. U. Kalanov +1
СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 2
ABI
Effect of Solar Radiation of Different Power on the Internal Amplification of the Primary Photocurrent in Heterostructures Based on Cadmium Telluride
R. R. Kabulov, S. Yu. Gerasimenko, F. A. Akbarov
СтатьяAdvanced Semiconductor Detectors and MaterialsApplied Solar Energy2023Цитирований: 2
ABI
Drift mobility of carriers in porous silicon
N. S. Averkiev, L. P. Kazakova, É. A. Lebedev +1
СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2001Цитирований: 1
ABI
The Field and Spectrum Dependences of Impurity Photoconductivity with Exclusion in Compensated Semiconductors
D. A. Aronov, B. R. Mamatkulov
СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1986Цитирований: 1
ABI
The Capacitance and Characteristic Relaxation Times at Carrier Exclusion in Compensated Semiconductors with Deep Traps and Non-Injecting Contacts
D. A. Aronov, B. R. Mamatkulov
СтатьяAdvanced Research in Systems and Signal Processingphysica status solidi (a)1984Цитирований: 0
ABI
Injection of degenerate electron-hole plasma
Yu. A. Katulevskii
СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1985Цитирований: 0
ABI
Mechanisms of photocurrent amplification in isotypic n+-GaSb-n0-GaInAsSb-n+-GaAlAsSb heterostructures
S. V. Slobodchikov, Х. М. Салихов, Yu. P. Yakovlev +1
СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1998Цитирований: 0
ABI
The theory of shot noise in the space-charge-limited diffusive conduction regime
V. L. Gurevich, M. I. Muradov
СтатьяQuantum and electron transport phenomenaJournal of Experimental and Theoretical Physics2002Цитирований: 0
ABI
Effect of the grain boundaries on the conductivity and current transport in II–VI films
T.M. Razykov, Smagul Karazhanov, A. Yu. Leĭderman +2
СтатьяChalcogenide Semiconductor Thin FilmsSolar Energy Materials and Solar Cells2006Цитирований: 0
ABI
Influence of phase segregation process on transport properties of dilute magnetic semiconductors
P. B. Parchinskiy, Fucheng Yu, Cunxu Gao +4
СтатьяZnO doping and propertiesJournal of Magnetism and Magnetic Materials2006Цитирований: 0
ABI
Photosensitive n-Ox/p-CuIn3Se5 heterostructures
I. V. Bodnar, A. A. Vaĭpolin, V. Yu. Rud’ +3
СтатьяChalcogenide Semiconductor Thin FilmsJournal of Applied Spectroscopy2006Цитирований: 0
ABI
Без названия
A.K. Uteniyazov, A. Yu. Leyderman, R. A. Ayukhanov +25
ДругоеAdvanced Semiconductor Detectors and MaterialsSemiconductor Physics Quantum Electronics & Optoelectronics2020Цитирований: 0
ABI
The Effect of Ultrasonic Treatments on Current Transport Processes in Al‐Al2O3‐p‐CdTe‐Mo Structure
A.K. Uteniyazov, A. Yu. Leyderman, M. V. Gafurova +2
СтатьяIntermetallics and Advanced Alloy PropertiesAdvances in Materials Science and Engineering2021Цитирований: 0
ABI