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Silicon Nanostructures and Photoluminescence

Работ: 380

  1. Exclusion effect quenching in compensated semiconductors under the action of impurity illumination generating majority current carriers

    D. A. Arunuv, P. I. Knigin, B. K. Mamatkulov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1984Цитирований: 2
    ABI

  2. Nonselective polycrystalline radiation detectors based on higher manganese silicides

    T. S. Kamilov, A. Zh. Khusanov, М. К. Бахадырханов +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2002Цитирований: 1
    ABI

  3. Silicon carbide materials obtained from rice husk

    G. T. Adylov, Sh. A. Faiziev, M. S. Paizullakhanov +2

    СтатьяAdvanced ceramic materials synthesisTechnical Physics Letters2003Цитирований: 1
    ABI

  4. Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

    М. К. Бахадырханов, U. X. Sodikov, Н. Ф. Зикриллаев +1

    СтатьяChalcogenide Semiconductor Thin FilmsSurface Engineering and Applied Electrochemistry2007Цитирований: 1
    ABI

  5. Dependence of the Urbach energy on the Fermi level in A-Si:H films

    S. Zajnobidinov, Р. Г. Икрамов, Nuritdinova +1

    СтатьяThin-Film Transistor Technologies2008Цитирований: 1
    ABI

  6. Investigation of the electrophysical properties and structures of impurity-defective complexes in silicon doped with palladium

    Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

    СтатьяSilicon Nanostructures and PhotoluminescenceRussian Physics Journal2010Цитирований: 1
    ABI

  7. Electron Structure Modification of Interfaces in SiO<sub>2</sub> Glass with PbO Nanoparticles at Gamma-Irradiation

    Э. М. Ибрагимова, M. A. Mussaeva

    СтатьяGlass properties and applicationsJournal of Nanoscience and Nanotechnology2012Цитирований: 1
    ABI

  8. To the Theory of the Polarized Radiation Absorption in a Semiconductor (001) Quantum Well

    Rustam Yavkachovich Rasulov, I. Éshboltaev

    СтатьяSemiconductor Quantum Structures and DevicesRussian Physics Journal2018Цитирований: 1
    ABI

  9. Effect of Injection Phenomena on Electrical Properties of pSi--nSi1--xSnx Heterojunctions

    Kh. M. Madaminov

    СтатьяSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences2021Цитирований: 1
    ABI

  10. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba&amp;lt;sup&amp;gt;+&amp;lt;/sup&amp;gt; Ions in Si

    Gunel Imanova, I. R. Bekpulatov

    СтатьяSemiconductor materials and interfacesAmerican Journal of Nano Research and Applications2021Цитирований: 1
    ABI

  11. Investigation of background radiation and the possibility of its limitation in a semiconductor ionization system

    H.T. Yuldashev, S.Z. Mirzaev

    СтатьяLaser Design and ApplicationsACADEMICIA An International Multidisciplinary Research Journal2021Цитирований: 1
    ABI

  12. Processes of Current Transport in p-Si-n-(Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(GaP)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Heterostructure Produced by Liquid Phase Epitaxy

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +4

    СтатьяSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology2022Цитирований: 1
    ABI

  13. Influence of Ultrasonic Waves on Current-Voltage Characteristics and Polarization Effects of Si-N-P Radiation Receivers

    Abdumalik Gaibov, Kutbiddin Ilovitddinovich Vakhobov, B.V. Ibragimova +2

    Статья3D IC and TSV technologiesMaterials science forum2022Цитирований: 1
    ABI

  14. Suns-Voc Characteristics of Silicon Solar Cell: Experimental and Simulation Study

    J. Gulomov, Р. Алиев, Jamshidbek I. Kakhkhorov +1

    Статьяsolar cell performance optimizationJournal of Nano- and Electronic Physics2023Цитирований: 1
    ABI

  15. Physics of High Efficiency Silicon Solar Cell with Nanoinclusions of Lead Chalcogenides

    M.A. Askarov, E. Z. Imamov, Kh. N. Karimov

    СтатьяChalcogenide Semiconductor Thin FilmsJournal of Nano- and Electronic Physics2024Цитирований: 1
    ABI

  16. Influence of Gold on Structural Defects of Silicon

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Khaitbaev +3

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2024Цитирований: 1
    ABI

  17. The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

    Habibjon Kushiev, B. O. Isakov, U. X. Mukhammadjonov

    СтатьяMaterial Properties and ApplicationsJournal of Nano- and Electronic Physics2024Цитирований: 1
    ABI

  18. Thermally Stimulated Transformation of Oxygen Atoms Between Phase States in a Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, A. V. Khugaev +4

    СтатьяSilicon Nanostructures and PhotoluminescenceSilicon2024Цитирований: 1
    ABI

  19. Morphological Studies of (Ge2)1-X(ZnSe)X Solid Solutions

    A.Sh. Razzokov, А. С. Саидов, M.A. Shonazarova +2

    СтатьяPhase-change materials and chalcogenidesEast European Journal of Physics2025Цитирований: 1
    ABI

  20. Converters of the Thermal Component of Concentrated Solar Radiation Based on Granular Silicon

    B. M. Abdurakhmanov, M. M. Adilov, Х. Б. Ашуров +1

    СтатьяSilicon Nanostructures and PhotoluminescenceApplied Solar Energy2020Цитирований: 1
    ABI

  21. Study of certain properties of Si-Si1−xGex (0 ≤ x ≤ 1) structures grown from a restricted tin-based solution-melt by liquid-phase epitaxy

    Б. Сапаев, A. S. Saidov

    СтатьяSemiconductor materials and interfacesSemiconductors2005Цитирований: 1
    ABI

  22. ANALYSIS OF POROUS NANOSILICON BY RAMAN SPECTROSCOPY

    V. M. Rotshteyn, T. K. Turdaliev, Х. Б. Ашуров

    СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Applied Spectroscopy2022Цитирований: 1
    ABI

  23. Investigation of the influence of external effects on the behavior of gold impurity in silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, I. G. Tursunov +1

    СтатьяSemiconductor materials and interfacesSemiconductors2000Цитирований: 1
    ABI

  24. Investigation of the growth and properties of epitaxial layers of Si1−xSnx solid solutions

    Б. Сапаев, А. С. Саидов

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2003Цитирований: 1
    ABI

  25. Determination of the resistance of external parameters to the degradation of the parameters of silicon photocells with input nickel atoms

    Elyor Bakhriddinovich Saitov

    СтатьяSilicon Nanostructures and PhotoluminescencePhysical Sciences and Technology2022Цитирований: 1
    ABI