Silicon Nanostructures and Photoluminescence

Работ: 380

Injection enhancement of photocurrent in polycrystalline silicon p+-n-n+ structures
Р. Алиев
СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors1997Цитирований: 1
ABI
The synthesis and properties of epitaxial layers of (Si2)1−x(GaAs)x solid solutions on silicon substrates
Б. Сапаев, А. С. Саидов, B. N. Zaveryukhin
СтатьяSemiconductor materials and interfacesTechnical Physics Letters2004Цитирований: 1
ABI
Synthesis and properties of Ge-(Ge2)1−x(GaAs)x (0≤x≤1.0) epitaxial heterostructures grown by LPE from lead-based solution melts
Б. Сапаев
СтатьяSemiconductor materials and interfacesTechnical Physics Letters2004Цитирований: 1
ABI
Silicon solar cells with Si-Ge microheterojunctions
Б. А. Абдурахманов, Х. М. Илиев, С. А. Тачилин +1
СтатьяSilicon and Solar Cell TechnologiesRussian Microelectronics2012Цитирований: 1
ABI
Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions
T. S. Kamilov, L. L. Aksenova, B. Z. Sharipov +1
СтатьяSemiconductor materials and interfacesSemiconductors2015Цитирований: 1
ABI
Interaction of multiply charged manganese nanoclusters with selenium and tellurium atoms in silicon
М. К. Бахадырханов, Z.M. Saparniyazova, Х. М. Илиев +1
СтатьяSemiconductor Quantum Structures and DevicesInorganic Materials2015Цитирований: 1
ABI
Electrical Properties of Silicon Doped with Manganese via High-Temperature Diffusion
M. K. Bakhadirkhanov, Х. М. Илиев, M. O. Tursunov +3
СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2021Цитирований: 1
ABI
Analysis of Porous Nanosilicon by Raman Spectroscopy
V. M. Rotshteyn, T. K. Turdaliev, Х. Б. Ашуров
СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Applied Spectroscopy2022Цитирований: 1
ABI
Infralow-frequency oscillations in photoconductivity of chromium-doped silicon
Kh. Kh. Dzhuliev, A. Yu. Leĭderman, A. T. Mamadalimov
СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2003Цитирований: 1
ABI
Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions
D. P. Bhattacharyya, D. A. Vinokurov, G.M. Gusinskii +6
СтатьяIon-surface interactions and analysisTechnical Physics Letters1998Цитирований: 1
ABI
Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms
М. К. Бахадырханов, С. Б. Исамов, Х. М. Илиев +1
СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2015Цитирований: 1
ABI
Nonmonotonous capacitance-voltage characteristics in metal-glass-semiconductor structures
С. И. Власов, Aslan Nasirov, О. О. Маматкаримов +1
СтатьяSemiconductor materials and devicesSurface Engineering and Applied Electrochemistry2008Цитирований: 1
ABI
Research of Surface and Near – Surface Region Diffusion Doped Silicon by Manganese
Makhmudhodzha Isaev, Abdumalik Gaibov, Abdigani Eshkulov +2
ГлаваSemiconductor materials and interfacesLecture notes in networks and systems2022Цитирований: 1
ABI
Expansion of the spectral sensitivity range of the silicon photocells by growing a solid (Si2)1–x (GaP) x (0 ≤ x ≤ 1) solution
D. V. Saparov, М. С. Саидов, А. С. Саидов
СтатьяSemiconductor materials and interfacesApplied Solar Energy2016Цитирований: 1
ABI
Drift mobility of carriers in porous silicon
N. S. Averkiev, L. P. Kazakova, É. A. Lebedev +1
СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2001Цитирований: 1
ABI
Thermophysical spectroscopy of the defective states in silicon
Kh. T. Igamberdyev, A. T. Mamadalimov, P. K. Khabibullaev
СтатьяSilicon and Solar Cell TechnologiesJournal of Engineering Physics and Thermophysics1989Цитирований: 1
ABI
Effect of heat treatment on the properties of erbium-doped silicon
С. И. Власов, D. É. Nazyrov, A. A. Iminov +1
СтатьяSemiconductor materials and interfacesTechnical Physics Letters2000Цитирований: 1
ABI
An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation
V. T. Tulanov, Kh. B. Siyabekov, A.Sh. Davletova +1
СтатьяLaser Design and ApplicationsSemiconductors2001Цитирований: 1
ABI
Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass
П. Б. Парчинский, С. И. Власов
СтатьяSemiconductor materials and interfacesRussian Microelectronics2001Цитирований: 1
ABI
Superlinearity of photocurrent in polycrystalline Si p - n structures
B. M. Abdurakhmanov, Р. Алиев, R. Bilyalov
СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductor Science and Technology1996Цитирований: 1
ABI
Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions
T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1
СтатьяSemiconductor materials and interfacesTechnical Physics2013Цитирований: 1
ABI
Computer simulation of generation-recombination currents in amorphous silicon p-n diode structures
S. A. Azimov, P. M. Karageofgy-Alkalaev, A. Yu. Leĭderman +1
СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1984Цитирований: 1
ABI
Influence of structure defects on the radiation enhanced gold diffusion in silicon
A. I. Koifman, N. Narkulov, Marat S. Yunusov
СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1975Цитирований: 1
ABI
The Influence of Exclusion on Light Absorption by Free Carriers in “Pure” (almost Intrinsic) Semiconductors with Non-Injecting Contacts
D. A. Aronov, V. V. Rubinov
СтатьяSilicon Nanostructures and Photoluminescencephysica status solidi (a)1982Цитирований: 1
ABI
The low-temperature doping of silicon by radiation-induced diffusion
A. I. Koifman, A. N. Narkulov, Б. Л. Оксенгендлер +1
СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1976Цитирований: 0
ABI