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Silicon Nanostructures and Photoluminescence

Работ: 380

  1. Electrical Properties and Positron Annihilation in Neutron-Irradiated n-InP

    V. N. Brudnyı̆, V. A. Charchenko, N. G. Kolin +3

    СтатьяSemiconductor materials and devicesphysica status solidi (a)1986Цитирований: 0
    ABI

  2. Energy dependence of silicon amorphization during ion implantation-part I

    U. Yarkulov

    СтатьяSilicon and Solar Cell TechnologiesRadiation Effects1986Цитирований: 0
    ABI

  3. On the Theory of Majority-Carrier Silicon Solar-Cell MTIS Structures with a Schottky Barrier

    D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1986Цитирований: 0
    ABI

  4. Phase transitions in doped silicon

    D. A. Vakhabov, A. S. Zakirov, Kh. T. Igamberdyev +6

    СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Engineering Physics and Thermophysics1988Цитирований: 0
    ABI

  5. The photoelectric characteristics of solar p–i–n photocells based on hydrogenated amorphous silicon with built-in electric field homogeneous in the i-layer thickness

    D. A. Aronov, R. R. Kabulov, Yu. M. Yuabov

    СтатьяThin-Film Transistor Technologiesphysica status solidi (a)1990Цитирований: 0
    ABI

  6. Photochemical Reorganization of Deep Impurity Centres in Silicon. Dissociation of Donor–Acceptor Pairs

    K. A. Adilov

    СтатьяSilicon Nanostructures and Photoluminescencephysica status solidi (b)1991Цитирований: 0
    ABI

  7. Heteroepitaxy of GaAs on Porous Silicon: The Structure of the Interface

    T. Kovyazina, A. A. Kutas, V.I. Khitko +5

    СтатьяSilicon Nanostructures and PhotoluminescenceMaterials science forum1993Цитирований: 0
    ABI

  8. Low Temperature Phase Transition (Pt) and Defect Formation (Df) in Silicon with Dioxide Inclusions Under X-Ray Irradiation

    Sh. Makhkamov, S. N. Abdurakhmanova

    СтатьяSilicon and Solar Cell TechnologiesMRS Proceedings1995Цитирований: 0
    ABI

  9. Tensor electric properties of n-Si monocrystals

    И. Н. Каримов, A.R. Turaev, A.A. Khlbekov +1

    СтатьяSemiconductor materials and interfaces1995Цитирований: 0
    ABI

  10. The influence of laser annealing on the surface state of ion doped silicon

    I.N. Kodirov, A. K. Tashatov, Б. Е. Умирзаков +1

    СтатьяLaser Material Processing Techniques1995Цитирований: 0
    ABI

  11. Correlation Between Surface Morphology and Lattice Orientation of Microcrystalline Silicon

    Michio Kondo, T. Nishimiya, K. Saitoh +2

    СтатьяThin-Film Transistor TechnologiesMRS Proceedings1997Цитирований: 0
    ABI

  12. Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight

    K. M. Doshchanov

    СтатьяThin-Film Transistor TechnologiesSemiconductors1997Цитирований: 0
    ABI

  13. Influence of surface wettability on the cathodic electroluminescence of porous silicon

    D. N. Goryachev, O. M. Sreseli, L. V. Belyakov

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1997Цитирований: 0
    ABI

  14. Studies on sensitivity of porous silicon surfaces to environmental gases

    Ali E. Aliev, Sh. U. Yuldashev, P. K. Khabibullaev +2

    СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Materials Engineering and Performance1997Цитирований: 0
    ABI

  15. Bolometric properties of silicon thin-film structures fabricated by plasmachemical vapor-phase deposition

    V. Yu. Zerov, Yu. V. Kulikov, V. G. Malyarov +2

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1997Цитирований: 0
    ABI

  16. Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures

    Н. А. Соболев, A. M. Emel’yanov, Yu. A. Nikolaev +6

    СтатьяSilicon Nanostructures and PhotoluminescenceMaterials science forum1997Цитирований: 0
    ABI

  17. Effect of the degree of compensation of sulfur impurity levels on the photoconductivity of silicon near 10.6 µm

    G. B. Gorlin, V. T. Tulanov, Kh. B. Siyabekov

    СтатьяSemiconductor materials and interfacesTechnical Physics1997Цитирований: 0
    ABI

  18. X-ray monitoring of the filling of cluster lattices in synthetic opals

    В. В. Ратников

    СтатьяPhotonic Crystals and ApplicationsTechnical Physics Letters1997Цитирований: 0
    ABI

  19. Photoconductivity of sulfur-doped silicon near 10.6 µm

    Kh. B. Siyabekov, V. T. Tulanov

    СтатьяThermography and Photoacoustic TechniquesSemiconductors1997Цитирований: 0
    ABI

  20. Polycrystalline silicon S-diode fabricated using phosphorus thermal diffusion along grain boundaries

    R. Aliev, B. M. Abdurakhmanov, R. Bilyalov

    СтатьяSemiconductor materials and interfacesInterface Science1997Цитирований: 0
    ABI

  21. Fabrication of regular three-dimensional lattices of submicron silicon clusters in an SiO2 opal matrix

    V. N. Bogomolov, В. Г. Голубев, Н. Ф. Картенко +6

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1998Цитирований: 0
    ABI

  22. On the mechanisms of long-term relaxation of the conductivity in compensated Si〈B,S〉 and Si〈B,Rh〉 as a result of irradiation

    Marat S. Yunusov, M. Kаrimov, Б. Л. Оксенгендлер

    СтатьяSemiconductor materials and interfacesSemiconductors1998Цитирований: 0
    ABI

  23. Diffusion of erbium in silicon

    С. З. Зайнабидинов, D.E. Nazirov, A. Zh. Akbarov +2

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters1998Цитирований: 0
    ABI

  24. Light-Induced Degradation Effects in a-Si:H Observed by Raman Scattering Measurements

    Paul Stradins, Michio Kondo, Nobuhiro Hata +1

    СтатьяThin-Film Transistor TechnologiesMRS Proceedings1998Цитирований: 0
    ABI

  25. Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm

    V. B. Voronkov, V. G. Golubev, Н. И. Горшков +4

    СтатьяThin-Film Transistor TechnologiesTechnical Physics Letters1998Цитирований: 0
    ABI