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Silicon and Solar Cell Technologies

Работ: 568

  1. The features of impurity thermal-Photovoltaic and thermal-Voltaic effect of polycrystalline Structures

    L. O. Olimov, B. M. Abdurakhmanov

    СтатьяSemiconductor materials and interfacesAdvances in Energy and Power2013Цитирований: 2
    ABI

  2. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

    Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2002Цитирований: 2
    ABI

  3. Effective solar cells based on high-resistance monocrystalline silicon

    М. Н. Турсунов, A. Yu. Leĭderman, S. Dadamukhamedov +3

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2007Цитирований: 2
    ABI

  4. The Effects of Field and Temperature Heating in Intrinsic Semiconductors with Non-Injecting Contacts

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1982Цитирований: 2
    ABI

  5. Exclusion effect quenching in compensated semiconductors under the action of impurity illumination generating majority current carriers

    D. A. Arunuv, P. I. Knigin, B. K. Mamatkulov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1984Цитирований: 2
    ABI

  6. Low-temperature lithium drift in silicon

    O. A. Klimkova, O. R. Niyazova

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1970Цитирований: 1
    ABI

  7. On the theory of transient process after reversal of a p–i–n diode current from forward to reverse direction (I)

    D. A. Aronov, R. Mamatkulov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1972Цитирований: 1
    ABI

  8. Positron Annihilation and Electrical Properties of Electron-Irradiated (≈ 2 MeV) InAs Crystals

    V. N. Brudnyı̆, S.A. Vorobiev, A. A. Tsoi

    СтатьяMuon and positron interactions and applicationsphysica status solidi (a)1982Цитирований: 1
    ABI

  9. Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers

    S. A. Asimov, D. A. Aronov, D. K. Isamukhamedova +1

    СтатьяSemiconductor materials and interfacesphysica status solidi (a)1982Цитирований: 1
    ABI

  10. The criteria of diffusionless solution validity in the theory of exclusion in “super-pure” semiconductors

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1985Цитирований: 1
    ABI

  11. Ion bombardment effect on Si homoepitaxial growth from ion molecular beams

    T.S. Pugacheva, М. С. Саидов, A. S. Lutovich

    СтатьяIon-surface interactions and analysisRadiation Effects1987Цитирований: 1
    ABI

  12. Carrier transport in a diode base with locally nonuniform recombination properties

    А. В. Иванов, N. B. Strokan, V. B. Shuman

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters1997Цитирований: 1
    ABI

  13. Dynamic Strain Conductivity of Compensated Silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, I. G. Tursunov +1

    СтатьяElectromagnetic Effects on MaterialsModern Physics Letters B1998Цитирований: 1
    ABI

  14. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

    A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3

    СтатьяSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics2000Цитирований: 1
    ABI

  15. Properties of precisely compensated semiconductors

    Smagul Karazhanov

    СтатьяSilicon and Solar Cell TechnologiesSemiconductors2000Цитирований: 1
    ABI

  16. Silicon single crystals ion-doped with ytterbium

    D. É. Nazyrov, Semyon Goncharov, А. В. Суворов

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2000Цитирований: 1
    ABI

  17. Electrical properties of semiconductors with pair defects

    Smagul Karazhanov, É. V. Kanaki

    СтатьяSilicon and Solar Cell TechnologiesSemiconductors2000Цитирований: 1
    ABI

  18. Tensoresistive effects in tin-doped silicon under static and dynamic pressure conditions

    О. О. Маматкаримов, Р. Х. Хамидов

    СтатьяForce Microscopy Techniques and ApplicationsTechnical Physics Letters2003Цитирований: 1
    ABI

  19. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

    Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2003Цитирований: 1
    ABI

  20. High Energy Resolution Detectors Based on 4H-SiC

    Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5

    СтатьяParticle Detector Development and PerformanceMaterials science forum2005Цитирований: 1
    ABI

  21. Photothermal converters with silicon solar cells

    M. Mirzabaev, A. M. Mirzabaev, V. P. Kononerov +2

    СтатьяPhotovoltaic System Optimization TechniquesApplied Solar Energy2007Цитирований: 1
    ABI

  22. Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons

    М. С. Саидов, S. L. Lutpullaev, А. Yusupov +5

    СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2007Цитирований: 1
    ABI

  23. Dependence of the Urbach energy on the Fermi level in A-Si:H films

    S. Zajnobidinov, Р. Г. Икрамов, Nuritdinova +1

    СтатьяThin-Film Transistor Technologies2008Цитирований: 1
    ABI

  24. Investigation of the electrophysical properties and structures of impurity-defective complexes in silicon doped with palladium

    Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

    СтатьяSilicon Nanostructures and PhotoluminescenceRussian Physics Journal2010Цитирований: 1
    ABI

  25. Growth and properties of single crystals of Si1 − x Ge x (0 &lt; x &lt; 0.35) solid solutions

    I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev +1

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2010Цитирований: 1
    ABI